Time domain device modeling of High Frequency Power MOSFETs

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dc.contributor.authorHoagland, Richard W.en
dc.contributor.committeechairElshabini-Riad, Aicha A.en
dc.contributor.committeememberMoore, David J.en
dc.contributor.committeememberRiad, Sedki Mohameden
dc.contributor.departmentElectrical Engineeringen
dc.date.accessioned2014-03-14T21:26:46Zen
dc.date.adate2009-01-10en
dc.date.available2014-03-14T21:26:46Zen
dc.date.issued1993-12-15en
dc.date.rdate2009-01-10en
dc.date.sdate2009-01-10en
dc.description.abstractThe development of the High Frequency Power MOSFET has brought about a need for accurate models. Now that the frequency range of these MOSFETs is in domains where typically scattering parameter measurements are used, a broad band device model can prove to be extremely useful. This thesis summarizes the research performed towards the development of a wideband Gate model for the Motorola MRF162 High Frequency Power Transistor. The device theory for typical MOSFETs will be explained. This theory will lead into the development of the Power MOSFET and its associated frequency limitations. The benefits of Time Domain Techniques will be explained and how a wideband model is achieved from this technique. The result from the analysis of the measurements and the device theory is a wideband Gate model developed for the frequency range from 100MHz to 400MHz. Verification is achieved by curve matching the measured Time Domain Reflected waveforms with the simulated waveforms generated using a proprietary program Modified Transient Analysis Program (MTCAP) and by comparison of expected and simulated parasitic values.en
dc.description.degreeMaster of Scienceen
dc.format.extentviii, 121 leavesen
dc.format.mediumBTDen
dc.format.mimetypeapplication/pdfen
dc.identifier.otheretd-01102009-063443en
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-01102009-063443/en
dc.identifier.urihttp://hdl.handle.net/10919/40568en
dc.language.isoenen
dc.publisherVirginia Techen
dc.relation.haspartLD5655.V855_1993.H622.pdfen
dc.relation.isformatofOCLC# 29985291en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.lccLD5655.V855 1993.H622en
dc.subject.lcshMetal oxide semiconductors, Complementaryen
dc.subject.lcshMicrowave devicesen
dc.subject.lcshTime-domain analysisen
dc.titleTime domain device modeling of High Frequency Power MOSFETsen
dc.typeThesisen
dc.type.dcmitypeTexten
thesis.degree.disciplineElectrical Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen

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