Infrared absorption of neutron irradiated silicon

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dc.contributor.authorHarne, Jennings Sandsen
dc.contributor.departmentNuclear Engineering Physicsen
dc.date.accessioned2015-06-23T19:08:04Zen
dc.date.available2015-06-23T19:08:04Zen
dc.date.issued1960en
dc.description.abstractIn this work the infrared absorption of neutron irradiated silicon was compared to that of non-irradiated silicon at room and liquid nitrogen temperatures. It was found that instead of the 1.75 micron absorption band that has been mentioned in numerous papers transmission was completely cut off below about 2.5 microns at room temperature and about 1.8 microns at liquid nitrogen temperature. A weak absorption band was noted at 4.4 microns for all three samples at liquid nitrogen temperature and for the two irradiated samples at room temperature. Absorption due to free carriers decreased at the longer wavelengths (10-15 microns) with irradiation and cooling as was expected from past experiments. The resistivity of Si₄ increased from an assumed initial value of 10³ ohm-om to 1.89 X 10⁵ ohm-om.en
dc.description.degreeMaster of Scienceen
dc.format.extent55 leavesen
dc.format.mimetypeapplication/pdfen
dc.identifier.urihttp://hdl.handle.net/10919/53026en
dc.language.isoen_USen
dc.publisherVirginia Polytechnic Instituteen
dc.relation.isformatofOCLC# 26607091en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.lccLD5655.V855 1960.H376en
dc.subject.lcshIrradiationen
dc.subject.lcshSiliconen
dc.titleInfrared absorption of neutron irradiated siliconen
dc.typeThesisen
dc.type.dcmitypeTexten
thesis.degree.disciplineNuclear Engineering Physicsen
thesis.degree.grantorVirginia Polytechnic Instituteen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen

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