Nanostructures on Field Effect Transistors for Methane Gas Sensing

dc.contributor.authorKoch, Kinley Jewellen
dc.contributor.committeechairNguyen, Vinhen
dc.contributor.committeememberCai, Wenjunen
dc.contributor.committeememberPham, Thang Toanen
dc.contributor.departmentMaterials Science and Engineeringen
dc.date.accessioned2026-06-12T08:03:15Zen
dc.date.available2026-06-12T08:03:15Zen
dc.date.issued2026-06-11en
dc.description.abstractField Effect Transistors (FETs) are widely investigated as gas sensing platforms due to their high sensitivity, scalability, and tunable surface chemistry. However, methane detection using FET-based sensors remains challenging due to its weak physisorption and limited charge-transfer interactions with conventional sensing materials, often resulting in relatively high detection limits. This work investigates the integration of one-dimensional transition metal trichalcogenide (TMT) nanostructures as functional sensing elements to address these limitations. This approach utilizes the high surface area to volume ratio and intrinsic anisotropy of the one-dimensional TMT nanowires, along with their spectrally dependent optical absorption properties that overlap with the near-infrared (NIR) vibrational absorption modes of methane. This spectral overlap enables enhanced coupling between methane adsorption events and the local electronic and optical responses within the sensing device. TMT nanowires were synthesized and characterized by SEM and photoluminescence (PL) spectroscopy to confirm their morphology and optical properties. Following material characterization, the nanostructures were integrated onto FET channels to form hybrid sensing devices. Electrical measurements were then conducted under controlled methane concentrations to evaluate key performance metrics, including sensitivity and concentration-dependent response behavior of the devices. These experimental results indicate that TMT-functionalized FETs exhibit enhances methane sensitivity relative to unfunctionalized or conventional FET-based sensors, consistent with a physisorption dominated sensing mechanism increased by optical coupling effects. This study demonstrates the viability of TMT nanostructures as functional materials for next generation methane sensors and highlights the potential of optically coupled TMT/FET hybrid architectures for applications in environmental monitoring, industrial safety, and extraterrestrial atmospheric analysis.en
dc.description.abstractgeneralDetecting methane gas is important for environmental protection, industrial safety, and the search for possible signs of life beyond Earth. However, methane is difficult to detect at low concentrations because it interacts only weakly with most conventional sensing materials. This research explores a new type of methane sensing based on field-effect transistors (FETs), which are highly sensitive electronic devices commonly used in sensing applications. To improve methane detection, this study incorporates extremely small, wire-like materials known as one-dimensional transition metal trichalcogenides (TMTs) onto the surface of the FET sensors. These nanomaterials possess several advantageous properties, including a large surface area that allows increased interaction with gas molecules. In addition, their optical absorption behavior overlap with methane's characteristic absorption features, improving enhanced sensing through coupled optical and electronic interactions. The nanomaterials were fabricated and studied using advanced imaging and optical techniques, including scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. After characterization, the nanomaterials were integrated into FET devices and tested under varying methane concentrations to evaluate their sensing performance and sensitivity. The results show that adding these nanomaterials significantly improve methane sensitivity compared with traditional sensor designs. This work demonstrates a promising new approach for building more effective methane sensors, with potential applications in monitoring greenhouse gas emissions, preventing industrial hazards, and supporting space missions.en
dc.description.degreeMaster of Scienceen
dc.format.mediumETDen
dc.identifier.othervt_gsexam:47206en
dc.identifier.urihttps://hdl.handle.net/10919/143375en
dc.language.isoenen
dc.publisherVirginia Techen
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectField effect transistor (FET)en
dc.subjectnanowireen
dc.subjectmethaneen
dc.subjectgas sensingen
dc.subjectphotoactivateden
dc.titleNanostructures on Field Effect Transistors for Methane Gas Sensingen
dc.typeThesisen
thesis.degree.disciplineMaterials Science and Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen

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