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An X-ray study of the behavior of titanium films on silicon substrates

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dc.contributor.authorDietrich, Frank E.en
dc.contributor.committeechairHouska, Charles R.en
dc.contributor.committeememberHibbard, W. R. Jr.en
dc.contributor.committeememberFloridis, T. P.en
dc.contributor.committeememberLytton, Jack L.en
dc.contributor.departmentMetallurgical Engineeringen
dc.date.accessioned2014-03-14T21:38:19Zen
dc.date.adate2010-06-12en
dc.date.available2014-03-14T21:38:19Zen
dc.date.issued1977-06-15en
dc.date.rdate2010-06-12en
dc.date.sdate2010-06-12en
dc.description.abstractThe thin film reaction between silicon and titanium did differ from the ordinary diffusion process in bulk samples at elevated temperatures. The lower free energy monosilicide formed prior to the disilicide in bulk standards and was also the dominant reaction product at lower temperatures in films. Titanium thin films, 2.3 microns thick, sustained considerable mechanical deformation during cooling from elevated temperatures. Line broadening, greater than that obtained from cold worked filings of titanium at room temperature, necessitated the use of computer simulation techniques to analyze the diffracted intensity from the reacted structure. The structure and space group of titanium disilicide was confirmed along with a determination of both structure factor forms and accurate lattice parameters. A range of compositions for the monosilicide of titanium was observed along with the identification of Ti₅Si₄<sub>(37)</sub> as a high temperature compound. The identification of the inaccuracies and omissions present in the ASTM powder diffraction card files should resolve the confusion in the literature on the reaction between titanium films and silicon. The temperatures for formation of silicides in thin films was found to be substantially lower than previously reported<sub>(2)</sub>, indicative of the oxide free interface of the silicon substrates. The identification of the reactant silicides, deposited at the grain boundaries and as planar film at interfaces, establishes this study as the first attempt to develop a quantitative model for silicide formation in this transition metal system.en
dc.description.degreeMaster of Scienceen
dc.format.extentix, 193 leavesen
dc.format.mediumBTDen
dc.format.mimetypeapplication/pdfen
dc.identifier.otheretd-06122010-020211en
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-06122010-020211/en
dc.identifier.urihttp://hdl.handle.net/10919/43235en
dc.publisherVirginia Techen
dc.relation.haspartLD5655.V855_1977.D54.pdfen
dc.relation.isformatofOCLC# 39790323en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectfilm structuresen
dc.subject.lccLD5655.V855 1977.D54en
dc.titleAn X-ray study of the behavior of titanium films on silicon substratesen
dc.typeThesisen
dc.type.dcmitypeTexten
thesis.degree.disciplineMetallurgical Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen

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