On the feasibility and application of optical p to n inversion

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dc.contributor.authorCole, Eric D.en
dc.contributor.departmentElectrical Engineeringen
dc.date.accessioned2014-03-14T21:49:44Zen
dc.date.adate2013-11-15en
dc.date.available2014-03-14T21:49:44Zen
dc.date.issued1985-06-05en
dc.date.rdate2013-11-15en
dc.date.sdate2013-11-15en
dc.description.abstractThe feasibility of achieving carrier inversion of a properly doped crystal via optical excitation is studied. This process involves a host substrate doped with deep donors for n-type light characteristic and compensated by a shallow acceptor for p-type characteristic in the dark. This substrate is analyzed using well-known semiconductor equations. In addition conditions which must exist for carrier inversion are also specified. The solutions found are applied to a realistic set of dopants for illustrative purposes as well as indication of feasibility range. This inversion technique may possibly be used to generate bipolar junctions and thus devices. Other forms of photoconductivity are also qualitatively considered to supplement and extend the range of the inversion techniques applications. The processing of circuits using the developed concept offers possible interesting and useful advantages over existing techniques. The motivation for further research thus becomes obvious and is indeed the purpose of the thesis.en
dc.description.degreeMaster of Scienceen
dc.format.extentvii, 67 leavesen
dc.format.mediumBTDen
dc.format.mimetypeapplication/pdfen
dc.identifier.otheretd-11152013-040240en
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-11152013-040240/en
dc.identifier.urihttp://hdl.handle.net/10919/45719en
dc.publisherVirginia Techen
dc.relation.haspartLD5655.V855_1985.C643.pdfen
dc.relation.isformatofOCLC# 12740081en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.lccLD5655.V855 1985.C643en
dc.subject.lcshPhotoconductivityen
dc.subject.lcshSemiconductor dopingen
dc.subject.lcshSemiconductors -- Optical propertiesen
dc.subject.lcshSemiconductors -- Recombinationen
dc.titleOn the feasibility and application of optical p to n inversionen
dc.typeThesisen
dc.type.dcmitypeTexten
thesis.degree.disciplineElectrical Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen

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