High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors

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dc.contributor.authorDiMarino, Christina Marieen
dc.contributor.committeecochairBurgos, Rolandoen
dc.contributor.committeecochairBoroyevich, Dushanen
dc.contributor.committeememberGuido, Louisen
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessioned2017-06-13T19:44:04Zen
dc.date.adate2014-06-30en
dc.date.available2017-06-13T19:44:04Zen
dc.date.issued2014-05-02en
dc.date.rdate2014-06-30en
dc.date.sdate2014-05-14en
dc.description.abstractThis thesis provides insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor transistors, including the MOSFET, BJT, SJT, and normally-on and normally-off JFETs. Both commercial and sample devices from the semiconductor industry's well-known manufacturers were evaluated in this study. These manufacturers include: Cree Inc., ROHM Semiconductor, General Electric, Fairchild Semiconductor, GeneSiC Semiconductor, Infineon Technologies, and SemiSouth Laboratories. To carry out this work, static characterization of each device was performed from 25 ºC to 200 ºC. Dynamic characterization was also conducted through double-pulse tests. Accordingly, this thesis describes the experimental setup used and the different measurements conducted, which comprise: threshold voltage, transconductance, current gain, specific on-resistance, parasitic capacitances, internal gate resistance, and the turn on and turn off switching times and energies. For the latter, the driving method used for each device is described in detail. Furthermore, for the devices that require on-state dc currents, driving losses are taken into consideration. While all of the SiC transistors characterized in this thesis demonstrated low specific on-resistances, the SiC BJT showed the lowest, with Fairchild's FSICBH057A120 SiC BJT having 3.6 mΩ•cm2 (using die area) at 25 ºC. However, the on-resistance of GE's SiC MOSFET proved to have the smallest temperature dependency, increasing by only 59 % from 25 ºC to 200 ºC. From the dynamic characterization, it was shown that Cree's C2M0080120D second generation SiC MOSFET achieved dv/dt rates of 57 V/ns. The SiC MOSFETs also featured low turn off switching energy losses, which were typically less than 70 µJ at 600 V bus voltage and 20 A load current.en
dc.description.degreeMaster of Scienceen
dc.identifier.otheretd-05142014-131824en
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-05142014-131824/en
dc.identifier.urihttp://hdl.handle.net/10919/78116en
dc.language.isoen_USen
dc.publisherVirginia Techen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectpower semiconductor devicesen
dc.subjectSiC MOSFETen
dc.subjectSiC BJTen
dc.subjectSiC JFETen
dc.subjecthigh temperatureen
dc.subjectcharacterizationen
dc.subjectsilicon carbideen
dc.titleHigh Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistorsen
dc.typeThesisen
dc.type.dcmitypeTexten
thesis.degree.disciplineElectrical and Computer Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen

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