dc.contributor.author	Kar, Saurav	en
dc.contributor.committeechair	Asryan, Levon V.	en
dc.contributor.committeemember	Guido, Louis J.	en
dc.contributor.committeemember	Orlowski, Mariusz K.	en
dc.contributor.department	Materials Science and Engineering	en
dc.date.accessioned	2017-09-07T13:53:49Z	en
dc.date.available	2017-09-07T13:53:49Z	en
dc.date.issued	2017-08-03	en
dc.description.abstract	In this thesis, our primary objective was to theoretically analyze the real world modulation bandwidth of a DTI QD laser and this was done by analyzing the effect of out-tunneling leakage of carriers from QDs, and by analyzing the effect of electron-hole asymmetry on the device characteristics. We are confronted with the following results: 1) Effect of Out-Tunneling Leakage on Modulation Bandwidth in Double Tunneling Injection Quantum Dot Lasers To purely focus on this effect, the conditions of instantaneous carrier exchange between the OCL and QW (on each side of the structure) and tunneling injection into QDs are assumed and closed-form analytical expressions for modulation bandwidth are obtained. The relative decrease in modulation bandwidth, due to this effect, in a DTI QD laser (from plots of modulation bandwidth vs j on increasing wout) is then shown to be small, and at ranges of injection currents of operational interest, nearly negligible. Consequently, it is shown that the DTI laser is a robust device in terms of sensitivity to out-tunneling leakage i.e. much effort need not be paid in suppressing this phenomenon. 2) Effect of Electron-Hole Asymmetry on Modulation Bandwidth of Double Tunneling Injection Quantum Dot Lasers On analyzing the effect of electron-hole asymmetry on the device characteristics of a DTI QD laser, it can be noted (from plots of modulation bandwidth vs injection current) that there is no reduction in the maximum modulation bandwidth i.e. electron-hole asymmetry does not indicate a reduction in the effectiveness of such a DTI design. This is shown to occur as the maximum modulation bandwidth depends on both, the effective differential non-stimulated recombination time as well the photon lifetime in the optical cavity. The photon lifetime being much smaller than the former acts as the dominating factor, and hence we see no appreciable change in the maximum modulation bandwidth. In the course of this analysis, we also see that the actual condition i.e. that of electron hole asymmetry is closer, among the cases of symmetry, to symmetry assuming hole parameters rather than electron parameters. As such, in cases where electron-hole symmetry must be used (in order to facilitate numerical simplifications), a recommendation of this study is to use hole parameters instead.	en
dc.description.abstractgeneral	In this age of internet and optical communications, semiconductor lasers have a profound impact on the way we interact with our world. They act as intermediaries converting digital signals into optical pulses (in order to be transmitted) and then back into digital code. Understandably, the maximum speed at which these lasers can encode and decode information limits the speed of this entire communication network. This speed can be defined as the modulation bandwidth. A new design, the double tunneling-injection (DTI) quantum dot (QD) laser shows considerable promise, however its modulation bandwidth under real world operating conditions was yet to be analyzed. The aim of this thesis was to then theoretically analyze the real world modulation bandwidth of this new semiconductor laser design. This was done by analyzing the effect of unwanted leakage of carriers (out-tunneling) from the active region (Quantum Dots), and by analyzing the effect of electron-hole asymmetry on the device characteristics. The relative decrease in modulation bandwidth, due to leakage of carriers, in a DTI QD laser is then shown to be nearly negligible. Consequently, it is shown that the DTI QD laser is a robust device in terms of sensitivity to out-tunneling leakage, i.e., much effort need not be paid in suppressing this phenomenon. On analyzing the effect of electron-hole asymmetry on the device characteristics of a DTI QD laser, it is shown that there is no reduction in the maximum modulation bandwidth, i.e., electron-hole asymmetry does not indicate a reduction in the effectiveness of such a design. Thus, this analysis reiterates the fact that DTI QD lasers indeed show incredible potential to drastically improve modulation bandwidth and must be investigated further.	en
dc.description.degree	Master of Science	en
dc.format.medium	ETD	en
dc.identifier.uri	http://hdl.handle.net/10919/78816	en
dc.language.iso	en_US	en
dc.publisher	Virginia Tech	en
dc.rights	Creative Commons Attribution 3.0 United States	en
dc.rights.uri	http://creativecommons.org/licenses/by/3.0/us/	en
dc.subject	semiconductor lasers	en
dc.subject	quantum dot lasers	en
dc.title	Effect of Out-Tunneling Leakage and Electron-Hole Asymmetry on Modulation Response of Semiconductor Double Tunneling-Injection Quantum Dot Lasers	en
dc.type	Thesis	en
thesis.degree.discipline	Materials Science	en
thesis.degree.grantor	Virginia Polytechnic Institute and State University	en
thesis.degree.level	masters	en
thesis.degree.name	Master of Science	en

Effect of Out-Tunneling Leakage and Electron-Hole Asymmetry on Modulation Response of Semiconductor Double Tunneling-Injection Quantum Dot Lasers

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