Photoluminescence quantum efficiency of Er optical centers in GaN epilayers

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dc.contributor.authorHo, V. X.en
dc.contributor.authorDao, T. V.en
dc.contributor.authorJiang, H. X.en
dc.contributor.authorLin, J. Y.en
dc.contributor.authorZavada, J. M.en
dc.contributor.authorMcGill, S. A.en
dc.contributor.authorVinh, N. Q.en
dc.contributor.departmentCenter for Soft Matter and Biological Physicsen
dc.contributor.departmentPhysicsen
dc.date.accessioned2019-01-11T15:22:10Zen
dc.date.available2019-01-11T15:22:10Zen
dc.date.issued2017-01-05en
dc.description.abstractWe report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN under resonant excitation excitations were performed. Data provide a picture of the thermal quenching processes and activation energy levels. By comparing the photoluminescence from Er ions in the epilayer with a reference sample of Er-doped SiO2, we find that the fraction of Er ions that emits photon at 1.54 mu m upon a resonant optical excitation is approximately 68%. This result presents a significant step in the realization of GaN: Er epilayers as an optical gain medium at 1.54 mu m.en
dc.description.notesN.Q.V. acknowledges the support from NSF (ECCS-1358564). The materials growth effort at TTU was supported by JTO/ARO (W911NF-12-1-0330). The authors gratefully acknowledge F.W. Widdershoven for preparation of the SiO<INF>2</INF>: Er reference sample used for calibration.en
dc.description.sponsorshipNSF [ECCS-1358564]; JTO/ARO [W911NF-12-1-0330]en
dc.format.extent7en
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1038/srep39997en
dc.identifier.issn2045-2322en
dc.identifier.other39997en
dc.identifier.pmid28054672en
dc.identifier.urihttp://hdl.handle.net/10919/86671en
dc.identifier.volume7en
dc.language.isoen_USen
dc.publisherSpringer Natureen
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectearth-doped ganen
dc.subjectfiber amplifiersen
dc.subjectimplanted ganen
dc.subjectexcitationen
dc.subjecterbiumen
dc.subjectsien
dc.subjectsemiconductorsen
dc.subjectsiliconen
dc.subjectionsen
dc.titlePhotoluminescence quantum efficiency of Er optical centers in GaN epilayersen
dc.title.serialScientific Reportsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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