Measurement of transistor hybrid-[pi] parameters

This work involves the measurement of hybrid- π parameters of a transistor. A simple method of measuring these parameters with reasonable accuracy using available laboratory equipment at frequencies up to 3-MHz is discussed. The results are used to investigate the validity of the measured hybrid- π parameters by experimental measurements performed on the transistor. Various gain functions and output and input resistances are measured, and the results are compared with calculations based on the hybrid- π parameters.