Measurement of transistor hybrid-[pi] parameters

dc.contributor.authorNasser, Mohammed Husseinen
dc.contributor.departmentElectrical Engineeringen
dc.date.accessioned2023-04-20T14:53:49Zen
dc.date.available2023-04-20T14:53:49Zen
dc.date.issued1972en
dc.description.abstractThis work involves the measurement of hybrid- π parameters of a transistor. A simple method of measuring these parameters with reasonable accuracy using available laboratory equipment at frequencies up to 3-MHz is discussed. The results are used to investigate the validity of the measured hybrid- π parameters by experimental measurements performed on the transistor. Various gain functions and output and input resistances are measured, and the results are compared with calculations based on the hybrid- π parameters.en
dc.description.degreeM.S.en
dc.format.extentvii, 73 leavesen
dc.format.mimetypeapplication/pdfen
dc.identifier.urihttp://hdl.handle.net/10919/114709en
dc.language.isoenen
dc.publisherVirginia Polytechnic Institute and State Universityen
dc.relation.isformatofOCLC# 33413520en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.lccLD5655.V855 1972.N34en
dc.titleMeasurement of transistor hybrid-[pi] parametersen
dc.typeThesisen
dc.type.dcmitypeTexten
thesis.degree.disciplineElectrical Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameM.S.en

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