Design of a High Temperature GaN-Based VCO for Downhole Communications

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dc.contributor.authorFeng, Tianmingen
dc.contributor.committeechairHa, Dong Samen
dc.contributor.committeechairKoh, Kwang-Jinen
dc.contributor.committeememberSable, Daniel M.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessioned2017-02-21T09:00:18Zen
dc.date.available2017-02-21T09:00:18Zen
dc.date.issued2017-02-20en
dc.description.abstractDecreasing reserves of natural resources drives the oil and gas industry to drill deeper and deeper to reach unexploited wells. Coupled with the demand for substantial real-time data transmission, the need for high speed electronics able to operating in harsher ambient environment is quickly on the rise. This paper presents a high temperature VCO for downhole communication system. The proposed VCO is designed and prototyped using 0.25 μm GaN on SiC RF transistor which has extremely high junction temperature capability. Measurements show that the proposed VCO can operate reliably under ambient temperature from 25 °C up to 230 °C and is tunable from 328 MHz to 353 Mhz. The measured output power is 18 dBm with ±1 dB variations over entire covered temperature and frequency range. Measured phase noise at 230 °C is from -121 dBc/Hz to -109 dBc/Hz at 100 KHz offset.en
dc.description.abstractgeneralThe oil and gas industry are drilling deeper and deeper to reach unexploited wells due to decreasing reserves of easily available natural resources. In addition, high speed electronics able to operating in harsher ambient environment is required to meet the demand for substantial realtime data transmission. This work presents a high temperature VCO for downhole communication system which can meet the requirement aforementioned. The proposed VCO is designed and prototyped to meet the harsh temperature and high speed requirement. Measurements show that, under ambient temperature from 25 °C up to 230 °C, the proposed VCO can operate reliably from 328 MHz to 353 Mhz, as required by the communication system.en
dc.description.degreeMaster of Scienceen
dc.format.mediumETDen
dc.identifier.othervt_gsexam:9693en
dc.identifier.urihttp://hdl.handle.net/10919/75108en
dc.publisherVirginia Techen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjecthigh temperatureen
dc.subjectextreme environmenten
dc.subjectVCOen
dc.subjectGaN on SiCen
dc.subjectdownhole communications systemen
dc.titleDesign of a High Temperature GaN-Based VCO for Downhole Communicationsen
dc.typeThesisen
thesis.degree.disciplineElectrical Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen

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