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dc.contributor.authorRucker, Paul D.en_US
dc.date.accessioned2016-05-23T17:53:57Z
dc.date.available2016-05-23T17:53:57Z
dc.date.issued1987en_US
dc.identifier.urihttp://hdl.handle.net/10919/71231
dc.format.extentxi, 109 leavesen_US
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_USen_US
dc.publisherVirginia Polytechnic Institute and State Universityen_US
dc.rightsThis Item is protected by copyright and/or related rights. Some uses of this Item may be deemed fair and permitted by law even without permission from the rights holder(s), or the rights holder(s) may have licensed the work for use under certain conditions. For other uses you need to obtain permission from the rights holder(s).en_US
dc.subject.lccLD5655.V855 1987.R83en_US
dc.subject.lcshField-effect transistorsen_US
dc.subject.lcshIon implantationen_US
dc.titleA reliability comparison of recessed-gate and self-aligned gate small signal GaAs MESFETS utilizing an accelerated life test set designed for large scale automated testingen_US
dc.typeThesisen_US
dc.contributor.departmentElectrical Engineeringen_US
dc.description.degreeMaster of Scienceen_US
dc.identifier.oclc16655845en_US
thesis.degree.nameMaster of Scienceen_US
thesis.degree.levelmastersen_US
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen_US
thesis.degree.disciplineElectrical Engineeringen_US
dc.type.dcmitypeTexten_US


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